There are three types of plasma assisted CVD:

1) Microwave plasma CVD (MPCVD, microwave excitation frequency is usually 2.45GHz);

2) RF plasma CVD (usually the excitation frequency is 13.56MHz);

3) DC plasma CVD.

Compared with other methods, the advantages of MPCVD method are as follows:

1) The simplicity, flexibility and commercial availability of the reactor;

2) The quality of the sample can be repeated for hundreds of hours, and the plasma can be deposited continuously or non continuously for tens of hours;

3) High energy efficiency (high plasma density and low sheath potential) to ensure reasonable cost;

4) Ability to grow large-size diamond films;

5) Compared with other CVD technologies (such as HFCVD at 2000 ° C), the deposition temperature is relatively low, so the thermal mismatch and stress between the epitaxial layer and the substrate are small.